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FCP165N65S3 - N-Channel MOSFET

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General Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance.

This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.

Consequently, SUPERFET III MOSFET Easy−drive series helps manage EMI issues and allows for easier design implementation.

Overview

FCP165N65S3 MOSFET – Power, N-Channel, SUPERFET III, Easy-Drive 650 V, 19 A, 165.

Key Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 140 mW.
  • Ultra Low Gate Charge (Typ. Qg = 39 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 341 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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