FCP260N65S3 Datasheet | onsemi

MOSFET - Power, N-Channel, SUPERFET III, Easy Drive 650 V, 12 A, 260 m W Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features - 700 V @ TJ = 150°C - Typ. RDS(on) = 222 m W - Ultra Low Gate Charge (Typ. Qg = 24 n C) - Low Effective Output Capacitance (Typ. Coss(eff.) = 248 p F) - 100% Avalanche Tested - These Devices are Pb- Free and are Ro HS pliant Applications - puting / Display Power Supplies - Tele / Server Power Supplies - Industrial Power Supplies - Lighting / Charger / Adapter .onsemi. VDSS 650 V RDS(ON) MAX 260 m W @ 10 V ID MAX 12 A S POWER MOSFET TO- 220 CASE 340AT MARKING DIAGRAM © Semiconductor ponents Industries, LLC, 2017 August, 2019 - Rev. 4 $Y&Z&3&K FCP 260N65S3 $Y &Z &3 &K FCP260N65S3 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING...