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  ON Semiconductor Electronic Components Datasheet  

FCPF125N65S3 Datasheet

N-Channel MOSFET

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MOSFET – Power, N-Channel,
SUPERFET III, Easy Drive
650 V, 24 A, 125 mW
FCPF125N65S3
Description
SUPERFET III MOSFET is ON Semiconductor’s brandnew high
voltage superjunction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low onresistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provides superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET Easy drive series helps
manage EMI issues and allows for easier design implementation.
Features
700 V @ TJ = 150°C
Typ. RDS(on) = 105 mW
Ultra Low Gate Charge (Typ. Qg = 44 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 405 pF)
100% Avalanche Tested
These Devices are PbFree and are RoHS Compliant
Applications
Computing / Display Power Supplies
Telecom / Server Power Supplies
Industrial Power Supplies
Lighting / Charger / Adapter
www.onsemi.com
VDSS
650 V
RDS(ON) MAX
125 mW @ 10 V
ID MAX
24 A
D
G
S
POWER MOSFET
GD S
TO220F
CASE 221AT
MARKING DIAGRAM
$Y&Z&3&K
FCPF
125N65S3
© Semiconductor Components Industries, LLC, 2017
June, 2020 Rev. 6
$Y
&Z
&3
&K
FCPF125N65S3
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1
Publication Order Number:
FCPF125N65S3/D


  ON Semiconductor Electronic Components Datasheet  

FCPF125N65S3 Datasheet

N-Channel MOSFET

No Preview Available !

FCPF125N65S3
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
DC
AC (f > 1 Hz)
650
V
±30
V
±30
ID
Drain Current
Continuous (TC = 25°C)
24*
Continuous (TC = 100°C)
15*
IDM
Drain Current
Pulsed (Note 1)
60*
EAS
Single Pulsed Avalanche Energy (Note 2)
115
IAS
Avalanche Current (Note 2)
3.7
EAR
Repetitive Avalanche Energy (Note 1)
0.38
dv/dt
MOSFET dv/dt
100
A
A
mJ
A
mJ
V/ns
Peak Diode Recovery dv/dt (Note 3)
20
PD
Power Dissipation
(TC = 25°C)
Derate Above 25°C
38
W
0.31
W/°C
TJ, TSTG Operating and Storage Temperature Range
55 to +150
°C
TL
Maximum Lead Temperature for Soldering, 1/8from Case for 5 seconds
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature.
1. Repetitive rating: pulsewidth limited by maximum junction temperature.
2. IAS = 3.7 A, RG = 25 W, starting TJ = 25°C.
3. ISD 12 A, di/dt 200 A/ms, VDD 400 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
RqJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
Value
3.24
62.5
Unit
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
FCPF125N65S3
FCPF125N65S3
TO220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 Units
www.onsemi.com
2



Part Number FCPF125N65S3
Description N-Channel MOSFET
Maker ON Semiconductor
Total Page 3 Pages
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