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FCPF190N65FL1-F154 Datasheet

N-Channel MOSFET

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MOSFET – N-Channel,
SUPERFET) II, FRFET)
650 V, 20.6 A, 190 mW
FCPF190N65FL1-F154
Description
SUPERFET II MOSFET is ON Semiconductor’s brandnew high
voltage superjunction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low onresistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate. Consequently, SUPERFET II MOSFET
is very suitable for the various power system for miniaturization and
higher efficiency. SUPERFET II FRFET MOSFET’s optimized
reverse recovery performance of body diode can remove additional
component and improve system reliability.
Features
700 V @ TJ = 150°C
RDS(on) = 168 mW (Typ.)
Ultra Low Gate Charge (Typ. Qg = 60 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF)
100% Avalanche Tested
These Devices are PbFree and are RoHS Compliant
Applications
Computing / Display Power Supplies
Telecom / Server Power Supplies
Industrial Power Supplies
Lighting / Charger / Adapter
www.onsemi.com
VDSS
650 V
RDS(ON) MAX
190 mW @ 10 V
ID MAX
20.6 A
D
G
S
MOSFET
GDS
TO220F Ultra Narrow Lead
CASE 221BN
MARKING DIAGRAM
$Y&Z&3&K
FCPF
190N65F
© Semiconductor Components Industries, LLC, 2020
December, 2020 Rev. 0
$Y
&Z
&3
&K
FCPF190N65F
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1
Publication Order Number:
FCPF190N65FL1F154/D


  ON Semiconductor Electronic Components Datasheet  

FCPF190N65FL1-F154 Datasheet

N-Channel MOSFET

No Preview Available !

FCPF190N65FL1F154
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
DC
AC (f > 1 Hz)
650
V
±20
V
±30
ID
Drain Current
Continuous (TC = 25°C)
20.6
Continuous (TC = 100°C)
13.1
IDM
Drain Current
Pulsed (Note 1)
61.8
EAS
Single Pulsed Avalanche Energy (Note 2)
400
IAS
Avalanche Current (Note 2)
4
EAR
Repetitive Avalanche Energy (Note 1)
0.39
dv/dt
MOSFET dv/dt
100
A
A
mJ
A
mJ
V/ns
Peak Diode Recovery dv/dt (Note 3)
50
PD
Power Dissipation
(TC = 25°C)
Derate Above 25°C
39
W
0.31
W/°C
TJ, TSTG Operating and Storage Temperature Range
55 to +150
°C
TL
Maximum Lead Temperature for Soldering, 1/8from Case for 5 Seconds
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 4A, RG = 25 W, starting TJ = 25°C.
3. ISD 10 A, di/dt 200 A/ms, VDD 380 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
RqJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
Value
3.2
62.5
Unit
_C/W
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
FCPF190N65FL1F154
FCPF190N65F
Package
TO220F
(PbFree)
Shipping
50 Units / Tube
www.onsemi.com
2


Part Number FCPF190N65FL1-F154
Description N-Channel MOSFET
Maker ON Semiconductor
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