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FCPF190N65FL1-F154 - N-Channel MOSFET

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General Description

SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance.

This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

Consequently, SUPERFET II MOSFET is very suitable for the various power system for miniaturization and higher efficiency.

Overview

MOSFET – N-Channel, SUPERFET) II, FRFET) 650 V, 20.6 A, 190 mW FCPF190N65FL1-F154.

Key Features

  • 700 V @ TJ = 150°C.
  • RDS(on) = 168 mW (Typ. ).
  • Ultra Low Gate Charge (Typ. Qg = 60 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 304 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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