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  ON Semiconductor Electronic Components Datasheet  

FCPF380N60-F152 Datasheet

N-Channel MOSFET

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FCPF380N60-F152
N-Channel SuperFET® II MOSFET
600 V, 10.2 A, 380 mΩ
Features
• 650 V @TJ = 150°C
• Max. RDS(on) = 380 mΩ
• Ultra low gate charge (typ. Qg = 30 nC)
• Low effective output capacitance (typ. Coss.eff = 95 pF)
• 100% avalanche tested
Aplications
• LCD / LED / PDP TV Lighting
Description
SuperFET®II MOSFET is ON Semiconductor’s first generation of
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This advanced technology is
tailored to minimize conduction loss, provide superior
switching performance, and withstand extreme dv/dt rate and
higher avalanche energy. Consequently, SuperFET®II MOSFET
is suitable for various AC/DC power conversion for system minia-
turization and higher efficiency.
• Solar Inverter
• AC-DC Power Supply
D
GD S
TO-220F
Absolute Maximum Ratings TC = 25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-DC
-AC
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
©2013 Semiconductor Components Industries, LLC.
1
September-2017, Rev. 3
G
(f>1HZ)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
S
FCPF380N60-F152
600
±20
±30
10.2*
6.4*
30.6*
211.6
2.3
1.06
20
100
31
0.25
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCPF380N60-F152
4
0.5
62.5
Unit
oC/W
Publication Order Number:
FCPF380N60-F152/D


  ON Semiconductor Electronic Components Datasheet  

FCPF380N60-F152 Datasheet

N-Channel MOSFET

No Preview Available !

Package Marking and Ordering Information
Device Marking
FCPF380N60
Device
FCPF380N60-F152
Package
TO-220F
Eco Status
Green
Electrical Characteristics TC = 25oC unless otherwise noted
Packaging Type
Tube
Quantity
50
Symbol
Off Characteristics
Parameter
BVDSS
ΔBVDSS
ΔTJ
BVDS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss eff.
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
Test Conditions
Min.
VGS = 0V, ID = 10mA, TJ = 25°C
600
VGS = 0V, ID = 10mA, TJ = 150°C
650
ID = 10mA, Referenced to 25oC
-
VGS = 0V, ID = 10A
-
VDS = 480V, VGS = 0V
-
VDS = 480V, TC = 125oC
-
VGS = ±20V, VDS = 0V
-
VGS = VDS, ID = 250μA
2.5
VGS = 10V, ID = 5A
-
VDS = 20V, ID = 5A
-
-
VDS = 25V, VGS = 0V
f = 1MHz
-
-
VDS = 380V, VGS = 0V, f = 1MHz
-
VDS = 0V to 480V, VGS = 0V
-
VDS = 380V, ID = 5A
-
VGS = 10V
-
(Note 4)
-
f = 1MHz
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 380V, ID = 5A
VGS = 10V, R = 4.7Ω
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
ISM
Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 5A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 5A
dIF/dt = 100A/μs
-
-
-
(Note 4)
-
-
-
-
-
-
Typ.
-
-
0.6
700
-
-
-
-
0.33
11
1250
905
45
23
95
30
5
10
1
14
7
45
6
-
-
-
240
2.7
Max. Unit
-
V
-
V
-
V/oC
-
V
10
μA
10
±100 nA
3.5
V
0.38
Ω
-
S
1665 pF
1205 pF
60
pF
-
pF
-
pF
40
nC
-
nC
-
nC
-
Ω
38
ns
24
ns
100
ns
22
ns
10.2
A
30.6
A
1.2
V
-
ns
-
μC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 2.3A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD 5.1A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
www.onsemi.com
2



Part Number FCPF380N60-F152
Description N-Channel MOSFET
Maker ON Semiconductor
Total Page 3 Pages
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