FCU360N65S3R0 Datasheet - ON Semiconductor

N-Channel Power MOSFET

FCU360N65S3R0 Features

* 700 V @ TJ = 150°C

* Typ. RDS(on) = 310 mW

* Ultra Low Gate Charge (Typ. Qg = 18 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 173 pF)

* 100% Avalanche Tested

* These Devices are Pb

* Free and are RoHS Compliant Applications

FCU360N65S3R0 General Description

SUPERFET III MOSFET is ON Semiconductor’s brand *new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superi.

FCU360N65S3R0 Datasheet (358.98 KB)