FCU600N65S3R0 Datasheet - ON Semiconductor

N-Channel Power MOSFET

FCU600N65S3R0 Features

* 700 V @ TJ = 150°C

* Typ. RDS(on) = 493 mW

* Ultra Low Gate Charge (Typ. Qg = 11 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 127 pF)

* 100% Avalanche Tested

* These Devices are Pb

* Free, Halogen Free/BFR Free and are RoHS Complia

FCU600N65S3R0 General Description

SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switc.

FCU600N65S3R0 Datasheet (290.57 KB)