FDB045AN08A0 - N-Channel MOSFET

onsemi

Key Features

RDS(on) = 3.9 mΩ ( Typ. ) @ VGS = 10 V, ID = 80 A.
QG(tot) = 92 nC ( Typ. ) @ VGS = 10 V.
Low Miller Charge.
Low Qrr Body Diode.
UIS Capability (Single Pulse and Repetitive Pulse).

FDB045AN08A0 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDB045AN08A0
Manufacturer	onsemi
File Size	1.01 MB
Description	N-Channel MOSFET
Datasheet	FDB045AN08A0 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
FDB045AN08A0	N-Channel MOSFET	Fairchild Semiconductor
FDB045AN08_F085	N-Channel MOSFET	Fairchild Semiconductor
FDB047N10	MOSFET	Fairchild Semiconductor
FDB0165N807L	80V 310A N-Channel MOSFET	Fairchild Semiconductor
FDB016N04AL7	N-Channel MOSFET	Fairchild Semiconductor

Other Datasheets by onsemi

Part Number	Description
FDB045AN08A0-F085	N-Channel MOSFET
FDB035AN06A0	N-Channel MOSFET
FDB035N10A	N-Channel MOSFET
FDB050AN06A0	N-Channel MOSFET
FDB0690N1507L	N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

FDB045AN08A0 — N-Channel PowerTrench® MOSFET FDB045AN08A0 N-Channel PowerTrench® MOSFET 75 V, 80 A, 4.5 mΩ Features • RDS(on) = 3.9 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A • QG(tot) = 92 nC ( Typ.