FDB8444-F085
Features
- Typ r DS(on) = 3.9mΩ at VGS = 10V, ID = 70A
- Typ Qg(TOT) = 91n C at VGS = 10V
- Low Miller Charge
- Low Qrr Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
- Qualified to AEC Q101
Applications
- Automotive Engine Control
- Powertrain Management
- Solenoid and Motor Drivers
- Electronic Transmission
- Distributed Power Architecture and VRMs
- Primary Switch for 12V Systems
- Ro HS pliant
AD FREE I
GATE
SOURCE
TO-263AB
FDB SERIES
DRAIN (FLANGE)
©2010Semiconductor ponents Industries, LLC. September-2017,Rev 3
Publication Order Number: FDB8444-F085/D
FDB8444-F085 N-Channel Power Trench® MOSFET
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (VGS = 10V) Pulsed
(Note 1)
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25o C
(Note 2)
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC...
