FDC6302P
FDC6302P is Dual P-Channel MOSFET manufactured by onsemi.
Description
These Dual P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize onstate resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switchimg applications. Since bias resistors are not required this one P-Channel FET can replace several digital transistors with different bias resistors like the IMBx A series.
Features
-25 V, -0.12 A continuous, -0.5 A Peak.
RDS(ON) = 13 Ω @ VGS= -2.7 V RDS(ON) = 10 Ω @ VGS = -4.5 V.
Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V.
Gate-Source Zener for ESD ruggedness. >6k V Human Body Model
Replace multiple PNP digital transistors (IMHx A series) with one DMOS FET.
SOT-23
Super SOTTM-6
Super SOTTM-8
SO-8
SOT-223
SOIC-16
Absolute Maximum Ratings TA = 25o C unless other wise noted
Symbol Parameter
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ,TSTG ESD
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm)
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
© 1997 Semiconductor ponents Industries, LLC. October-2017, Rev....
