FDD3680 mosfet equivalent, n-channel mosfet.
* 25 A, 100 V. RDS(ON) = 46 mW @ VGS = 10 V
RDS(ON) = 51 mW @ VGS = 6 V
* Low Gate Charge (38 nC Typical)
* Fast Switching Speed
* High Performance Trench.
This N−Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOS.
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