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  ON Semiconductor Electronic Components Datasheet  

FDD3682-F085 Datasheet

N-Channel MOSFET

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FDD3682-F085
N-Channel PowerTrench® MOSFET
100V, 32A, 36m
Features
• rDS(ON) = 32m(Typ.), VGS = 10V, ID = 32A
• Qg(tot) = 18.5nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
• RoHS Compliant
Formerly developmental type 82755
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection System
• 42V Automotive Load Control
• Electronic Valve Train System
DRAIN
(FLANGE)
D
GATE
SOURCE
TO-252AA
FDD SERIES
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, RθJA = 52oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Ratings
100
±20
32
23
5.5
Figure 4
55
95
0.63
-55 to 175
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
1.58
100
52
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All ON Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2010 Semiconductor Components Industries, LLC.
September-2017, Rev. 1
Publication Order Number:
FDD3682-F085/D


  ON Semiconductor Electronic Components Datasheet  

FDD3682-F085 Datasheet

N-Channel MOSFET

No Preview Available !

Package Marking and Ordering Information
Device Marking
FDD3682
Device
FDD3682-F085
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
100
VDS = 80V
VGS = 0V
-
TC = 150oC -
VGS = ±20V
-
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
2
ID = 32A, VGS = 10V
-
rDS(ON)
Drain to Source On Resistance
ID = 16A, VGS = 6V
ID = 32A, VGS = 10V,
TC = 175oC
-
-
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
-
VDS = 25V, VGS = 0V,
f = 1MHz
-
-
VGS = 0V to 10V
-
VGS = 0V to 2V VDD = 50V
-
ID = 32A
-
Ig = 1.0mA
-
-
Resistive Switching Characteristics (VGS = 10V)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
-
-
VDD = 50V, ID = 32A
-
VGS = 10V, RGS = 16
-
-
-
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
Notes:
1: Starting TJ = 25°C, L = 0.27mH, IAS = 20A.
ISD = 32A
-
ISD = 16A
-
ISD = 32A, dISD/dt = 100A/µs
-
ISD = 32A, dISD/dt = 100A/µs
-
Typ Max Units
-
-
V
-
1
µA
-
250
-
±100 nA
-
4
V
0.032 0.036
0.040 0.060
0.080 0.090
1250
-
pF
190
-
pF
45
-
pF
18.5 28
nC
2.4
3.6
nC
6.5
-
nC
4.1
-
nC
4.6
-
nC
-
83
ns
9
-
ns
46
-
ns
24
-
ns
26
-
ns
-
75
ns
-
1.25
V
-
1.0
V
-
55
ns
-
92
nC
www.onsemi.com
2



Part Number FDD3682-F085
Description N-Channel MOSFET
Maker ON Semiconductor
Total Page 3 Pages
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