FDD86367 Datasheet | onsemi

Features - Typical RDS(on) = 3.3 m W at VGS = 10 V, ID = 80 A - Typical Qg(tot) = 68 n C at VGS = 10 V, ID = 80 A - UIS Capability - This Device is Pb- Free, Halogen Free/BFR Free and is Ro HS pliant Applications - Power Train Management - Solenoid and Motor Drivers - Integrated Starter/Alternator - Primary Switch for 12 V Systems MOSFET MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain- to- Source Voltage VGS Gate- to- Source Voltage 20 Drain Current - Continuous (VGS = 10) (Note 1) TC = 25C Pulsed Drain Current TC = 25C See Figure 4 EAS Single Pulse Avalanche Energy (Note 2) 82 m J PD Power Dissipation Derate Above 25C W/C TJ, TSTG Rq JC Rq JA Operating and Storage Temperature Thermal Resistance, Junction to Case Maximum Thermal Resistance, Junction to Ambient (Note 3) - 55 to + 175...