FDD86369
FDD86369 is N-Channel Power MOSFET manufactured by onsemi.
Features
- Typical RDS(on) = 5.9 mΩ at VGS = 10V, ID = 80 A
- Typical Qg(tot) = 34 n C at VGS = 10V, ID = 80 A
- UIS Capability
- Ro HS pliant
Applications
- Power Train Management
- Solenoid and Motor Drivers
- Integrated Starter/Alternator
- Primary Switch for 12V Systems
DTO-P-2A5K2
(TO-252)
For current package drawing, please refer to the ON website at http://.fairchildsemi./package‐drawings/ TO/TO252A03.pdf
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
VDSS VGS
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current
- Continuous (VGS=10) (Note 1) Pulsed Drain Current
Single Pulse Avalanche Energy
Power Dissipation
Derate Above 25o C
TJ, TSTG Operating and Storage Temperature
RθJC
Thermal Resistance, Junction to Case
RθJA
Maximum Thermal Resistance, Junction to Ambient
TC = 25°C TC = 25°C
(Note 2)
(Note 3)
Ratings 80 ±20 90
See Figure 4 29 150 1.0
-55 to + 175 1.0 52
Units V V
A m J W W/o C o C o C/W o...
