Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
DC/DC converters
Features
- rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A.
- rDS(ON) = 6.8mΩ, VGS = 4.5V, ID = 35A.
- High performance trench technology for extremely low
rDS(ON).
- Low gate charge.
- High power and current handling capability
D G
S DTO-P-2A5K2 (TO-252)
GDS
I-PAK (TO-251AA)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS
ID
EAS PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC = 25oC, VGS = 10V) (Note 1) Conti.
FDD8896-ONSemiconductor.pdf
