FDD8896 Datasheet | onsemi

Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed. Applications - DC/DC converters Features - r DS(ON) = 5.7mΩ, VGS = 10V, ID = 35A - r DS(ON) = 6.8mΩ, VGS = 4.5V, ID = 35A - High performance trench technology for extremely low r DS(ON) - Low gate charge - High power and current handling capability S DTO-P-2A5K2 (TO-252) I-PAK (TO-251AA) MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25o C, VGS = 10V) (Note 1) Continuous (TC = 25o C, VGS = 4.5V) (Note 1) Continuous (Tamb = 25o C, VGS = 10V, with RθJA = 52o C/W) Pulsed Single Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25o C TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area Ratings 30 ±20 94 85 17 Figure 4 168 80 0.53 -55 to 175 1.88 100 52 Units V V A A A A m J W W/o C o C o C/W o C/W o C/W ©2008 Semiconductor ponents Industries, LLC. September-2017, Rev. 2 Publication Order Number: FDD8896/D FDD8896 / FDU8896 Package Marking and Ordering...