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FDD9410-F085 Datasheet

N-Channel PowerTrench MOSFET

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FDD9410-F085
N-Channel Power Trench® MOSFET
40 V, 50 A, 4.1 mΩ
Features
„ Typ rDS(on) = 3.5 mΩ at VGS = 10V, ID = 50 A
„ Typ Qg(tot) = 23.5 nC at VGS = 10V, ID = 50 A
„ UIS Capability
„ RoHS Compliant
„ Qualified to AEC Q101
Applications
„ Automotive Engine Control
„ Powertrain Management
„ Solenoid and Motor Drivers
„ Integrated Starter/alternator
„ Primary Switch for 12V Systems
G
S
D
DTO-P-2A5K2
(TO-252)
G
D
S
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
EAS Single Pulse Avalanche Energy
PD
Power Dissipation
Derate Above 25oC
TJ, TSTG
RθJC
RθJA
Operating and Storage Temperature
Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient
TC = 25°C
TC = 25°C
(Note 2)
(Note 3)
Ratings
40
±20
50
See Figure4
40
75
0.5
-55 to + 175
2
52
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
FDD9410
FDD9410-F085
Package
D-PAK(TO-252)
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
Notes:
1: Current is limited by bondwire configuration.
2:
3:
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the solder
maximum
©2014 Semiconductor Components Industries, LLC.
August-2017, Rev3
Publication Order Number:
FDD9410-F085/D


  ON Semiconductor Electronic Components Datasheet  

FDD9410-F085 Datasheet

N-Channel PowerTrench MOSFET

No Preview Available !

Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
Min
BVDSS Drain to Source Breakdown Voltage
IDSS Drain to Source Leakage Current
IGSS
Gate to Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V
VDS = 40V, TJ = 25oC
VGS = 0V
TJ = 175oC(Note 4)
VGS = ±20V
40
-
-
-
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA
ID = 50A,
TJ = 25oC
VGS = 10V TJ = 175oC(Note 4)
2.0
-
-
Ciss
Coss
Crss
Rg
Qg(ToT)
Qg(th)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
VDS = 25V, VGS = 0V,
f = 1MHz
f = 1MHz
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 20V
ID = 50A
-
-
-
-
-
-
-
-
Typ
-
-
-
-
3.0
3.5
6.1
1715
453
28
2.3
23.5
3.2
9.6
4.4
Max Units
-
1
1
±100
V
μA
mA
nA
4.0 V
4.1 mΩ
7.1 mΩ
-
-
-
-
34.5
4
-
-
pF
pF
pF
Ω
nC
nC
nC
nC
Switching Characteristics
ton
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Drain-Source Diode Characteristics
VDD = 20V, ID = 50A,
VGS = 10V, RGEN = 6Ω
--
- 12
- 12
- 20
-9
--
VSD Source to Drain Diode Voltage
Trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ISD = 50A, VGS = 0V
ISD = 25A, VGS = 0V
IF = 50A, dISD/dt = 100A/μs,
VDD=32V
--
--
- 44
- 31.5
Note:
4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
38
-
-
-
-
45
1.25
1.2
58
41
ns
ns
ns
ns
ns
ns
V
V
ns
nC
www.onsemi.com
2


Part Number FDD9410-F085
Description N-Channel PowerTrench MOSFET
Maker ON Semiconductor
Total Page 6 Pages
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