FDFS2P106A - P-Channel MOSFET and Schottky Diode

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDFS2P106A
Manufacturer	ON Semiconductor
File Size	179.19 KB
Description	P-Channel MOSFET and Schottky Diode
Datasheet	FDFS2P106A Datasheet
Additional preview pages of the FDFS2P106A datasheet.

Product details

Description

The FDFS2P106A combines the exceptional performance of ON Semiconductor's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.

Features

a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features.
3.0 A,.
60V RDS(ON) = 110 mΩ @ VGS =.
10 V RDS(ON) = 140 mΩ @ VGS =.
4.5 V.
VF < 0.45 V @ 1 A (TJ = 125°C) VF < 0.53 V @ 1 A VF < 0.62 V @ 2 A.
Schottky and MOSFET incorporated into single power surface mount SO-8 package.
Electrically indepen.

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Published: Dec 24, 2023 |