Datasheet Summary
Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode
General Description
The FDFS2P106A bines the exceptional performance of ON Semiconductor's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package solution for DC to DC converters. It Features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
Features
- - 3.0 A,
- 60V RDS(ON) = 110 mΩ @ VGS =
- 10 V RDS(ON) = 140 mΩ @ VGS =
- 4.5 V
- VF < 0.45 V @ 1 A (TJ = 125°C)...
