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FDFS2P106A Datasheet P-channel MOSFET And Schottky Diode

Manufacturer: onsemi

Overview: FDFS2P106A FDFS2P106A Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode.

General Description

The FDFS2P106A combines the exceptional performance of ON Semiconductor's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.

This device is designed specifically as a single package solution for DC to DC converters.

It

Key Features

  • a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features.
  • 3.0 A,.
  • 60V RDS(ON) = 110 mΩ @ VGS =.
  • 10 V RDS(ON) = 140 mΩ @ VGS =.
  • 4.5 V.
  • VF < 0.45 V @ 1 A (TJ = 125°C) VF < 0.53 V @ 1 A VF < 0.62 V @ 2 A.
  • Schottky and MOSFET incorporated into single power surface mount SO-8 package.
  • Electrically indepen.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FDFS2P106A Integrated 60V P-Channel PowerTrench MOSFET and Schottky Diode Fairchild Semiconductor

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