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FDG6301N-F085 - Dual N-Channel Digital FET

Features

  • 25 V, 0.22 A Continuous, 0.65 A Peak.
  • RDS(ON) = 4 Ω @ VGS = 4.5 V,.
  • RDS(ON) = 5 Ω @ VGS = 2.7 V.
  • Very Low Level Gate Drive Requirements allowing Directop.
  • Eration in 3 V Circuits (VGS(th) < 1.5 V).
  • Gate.
  • Source Zener for ESD Ruggedness ( >6 kV Human Body Model).
  • Compact Industry Standard SC70.
  • 6 Surface Mount Package.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • These Devices are Pb.
  • Free, Hal.

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Full PDF Text Transcription (Reference)

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Dual N-Channel, Digital FET FDG6301N-F085 Features • 25 V, 0.22 A Continuous, 0.65 A Peak • RDS(ON) = 4 Ω @ VGS = 4.5 V, • RDS(ON) = 5 Ω @ VGS = 2.7 V. • Very Low Level Gate Drive Requirements allowing Directop− Eration in 3 V Circuits (VGS(th) < 1.5 V) • Gate−Source Zener for ESD Ruggedness ( >6 kV Human Body Model) • Compact Industry Standard SC70−6 Surface Mount Package. • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Low Voltage Applications as a Replacement for Bipolar Digital Transistors and Small Signal MOSFETs MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Units VDSS Drain to Source Voltage 25 V VGS Gate to Source Voltage 8V ID Drain Current Continuous 0.
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