FDG6320C - Dual-Channel Digital FET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDG6320C
Manufacturer	ON Semiconductor
File Size	370.19 KB
Description	Dual-Channel Digital FET
Datasheet	FDG6320C Datasheet
Additional preview pages of the FDG6320C datasheet.

Product details

Description

These dual N & P Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology, this very high density process is especially tailored to minimize on state resistance.

Features

N.
Ch 0.22 A, 0.25 V.
RDS(ON) = 4.0 W @ VGS = 4.5 V.
RDS(ON) = 5.0 W @ VGS = 2.7 V.
P.
Ch.
0.14 A,.
25 V.
RDS(ON) = 10 W @ VGS =.
4.5 V.
RDS(ON) = 13 W @ VGS =.
2.7 V.
Very Small Package Outline SC70.
6.
Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th) < 1.5 V).
Gate.
Source Zener for ESD Ruggedness (>6 kV Human Bod.

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Published: Dec 24, 2023 |