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FDG6320C Datasheet Dual-channel Digital Fet

Manufacturer: onsemi

Overview: Digital FET, Dual N & P Channel FDG6320C General.

General Description

These dual N & P−Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology, this very high density process is especially tailored to minimize on−state resistance.

This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.

Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.

Key Features

  • N.
  • Ch 0.22 A, 0.25 V.
  • RDS(ON) = 4.0 W @ VGS = 4.5 V.
  • RDS(ON) = 5.0 W @ VGS = 2.7 V.
  • P.
  • Ch.
  • 0.14 A,.
  • 25 V.
  • RDS(ON) = 10 W @ VGS =.
  • 4.5 V.
  • RDS(ON) = 13 W @ VGS =.
  • 2.7 V.
  • Very Small Package Outline SC70.
  • 6.
  • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th) < 1.5 V).
  • Gate.
  • Source Zener for ESD Ruggedness (>6 kV Human Bod.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FDG6320C Dual N & P Channel Digital FET Fairchild Semiconductor

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FDG6320C Distributor