FDG6322C datasheet, fet equivalent, ON Semiconductor

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FDG6322C Features and benefits

N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 Ω @ VGS= 4.5 V, RDS(ON) = 5.0 Ω @ VGS= 2.7 V. P-Ch -0.41 A,-25V, RDS(ON) = 1.1 Ω @ VGS= -4.5V, RDS(ON) = 1.5 Ω @ VGS= -2.7V. Very small p.

FDG6322C Application

as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this d.

FDG6322C Description

These dual N & P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimizeon-state resistance.

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