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FDG6342L Datasheet Integrated Load Switch

Manufacturer: onsemi

Overview: FDG6342L Integrated Load Switch FDG6342L Integrated Load Switch.

General Description

This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 1.5A output current capability are needed.

This load switch integrates a small N-Channel power MOSFET (Q1) that drives a large P-Channel power MOSFET (Q2) in one tiny SC70-6 package.

Applications „ Power management „ Load switch Q2 Vin,R1 4 ON/OFF 5 3 Vout,C1 Q1 2 Vout,C1 Equivalent Circuit IN VDROP OUT Pin 1 SC70-6 R1,C1 6 1 R2 See Application Circuit ON/OFF MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VIN VON/OFF ILoad PD Parameter Gate to Source Voltage (Q2) Gate to Source Voltage (Q1) Load Current -Continuous -Pulsed Power Dissipation for Single Operation TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics (Note 2) (Note 2) (Note 1a) (Note 1b) Ratings ±8 –0.5 to 8 1.5 6 0.36 0.3 –55 to +150 Units V V A W °C RθJA Thermal Resistance, Junction to Ambient Single operation (Note 1a) 350 RθJA Thermal Resistance, Junction to Ambient Single operation (Note 1b) 415 Package Marking and Ordering Information °C/W Device Marking .2L Device FDG6342L Package SC70-6 Reel Size 7’’ Tape Width 8mm Quantity 3000units ©2008 Semiconductor Components Industries, LLC.

Key Features

  • Max rDS(on) = 150mΩ at VGS = 4.5V, ID =.
  • 1.5A.
  • Max rDS(on) = 195mΩ at VGS = 2.5V, ID =.
  • 1.3A.
  • Max rDS(on) = 280mΩ at VGS = 1.8V, ID =.
  • 1.1A.
  • Max rDS(on) = 480mΩ at VGS = 1.5V, ID =.
  • 0.9A.
  • Control MOSFET (Q1) includes Zener protection for ESD ruggedness ( >4KV Human body model).
  • High performance trench technology for extremely low rDS(on).
  • Compact industry standard SC70-6 surface mount package.

FDG6342L Distributor