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FDH3632 - 100V 80A N-Channel MOSFET

Features

  • RDS(ON) = 7.5 mW (Typ. ), VGS = 10 V, ID = 80 A.
  • Qg (tot) = 84 nC (Typ. ), VGS = 10 V.
  • Low Miller Charge.
  • Low Qrr Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet Details

Part number FDH3632
Manufacturer onsemi
File Size 896.65 KB
Description 100V 80A N-Channel MOSFET
Datasheet download datasheet FDH3632 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET www.onsemi.com MOSFET – Power, N-Channel, POWERTRENCH) VDSS 100 V RDS(ON) MAX 9 mW ID MAX 80 A 100 V, 80 A, 9 mW D FDH3632, FDP3632, FDB3632 Features • RDS(ON) = 7.5 mW (Typ.), VGS = 10 V, ID = 80 A • Qg (tot) = 84 nC (Typ.
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