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FDH44N50 - N-Channel MOSFET

Datasheet Summary

Description

based on planar stripe and DMOS technology.

state resistance, and to provide better switching performance and higher avalanche energy strength.

Features

  • Low Gate Charge Qg Results in Simple Drive Requirement (Typ. 90 nC).
  • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness.
  • Reduced RDS(on) (110 mW (Typ. ) @ VGS = 10 V, ID = 22 A).
  • Reduced Miller Capacitance and Low Input Capacitance (Typ. Crss = 40 pF).
  • Improved Switching Speed with Low EMI.
  • 175C Rated Junction Temperature.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Datasheet preview – FDH44N50

Datasheet Details

Part number FDH44N50
Manufacturer ON Semiconductor
File Size 266.91 KB
Description N-Channel MOSFET
Datasheet download datasheet FDH44N50 Datasheet
Additional preview pages of the FDH44N50 datasheet.

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Full PDF Text Transcription

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MOSFET – Power, N-Channel, SMPS 500 V, 44 A, 120 mW FDH44N50 Description UniFETt MOSFET is onsemi’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Features  Low Gate Charge Qg Results in Simple Drive Requirement (Typ. 90 nC)  Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness  Reduced RDS(on) (110 mW (Typ.) @ VGS = 10 V, ID = 22 A)  Reduced Miller Capacitance and Low Input Capacitance (Typ.
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