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FDH44N50 - N-Channel MOSFET

General Description

based on planar stripe and DMOS technology.

state resistance, and to provide better switching performance and higher avalanche energy strength.

Key Features

  • Low Gate Charge Qg Results in Simple Drive Requirement (Typ. 90 nC).
  • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness.
  • Reduced RDS(on) (110 mW (Typ. ) @ VGS = 10 V, ID = 22 A).
  • Reduced Miller Capacitance and Low Input Capacitance (Typ. Crss = 40 pF).
  • Improved Switching Speed with Low EMI.
  • 175C Rated Junction Temperature.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Datasheet Details

Part number FDH44N50
Manufacturer onsemi
File Size 266.91 KB
Description N-Channel MOSFET
Datasheet download datasheet FDH44N50 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Power, N-Channel, SMPS 500 V, 44 A, 120 mW FDH44N50 Description UniFETt MOSFET is onsemi’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Features  Low Gate Charge Qg Results in Simple Drive Requirement (Typ. 90 nC)  Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness  Reduced RDS(on) (110 mW (Typ.) @ VGS = 10 V, ID = 22 A)  Reduced Miller Capacitance and Low Input Capacitance (Typ.