Datasheet Summary
MOSFET
- Dual, N-Channel, POWERTRENCH)
30 V, 2.9 A, 123 mW
General Description This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra- portable applications. It Features two independent N- Channel MOSFETs with low on- state resistance for minimum conduction losses. The MicroFETt 2x2 offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Features
- 2.9 A, 30 V
RDS(on) = 123 mW at VGS = 4.5 V RDS(on) = 140 mW at VGS = 3.0 V RDS(on) = 163 mW at VGS = 2.5 V
- Low Profile
- 0.8 mm Maximum
- In the New Package MicroFET
2x2 mm
- HBM ESD Protection Level >...
