Datasheet Summary
DATA SHEET .onsemi.
MOSFET
- Single, P-Channel, POWERTRENCH)
-20 V, -7.8 A, 30 mW
General Description This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It Features a MOSFET with low on- state resistance.
The MicroFET t 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Features
- Max RDS(on) = 30 mW at VGS =
- 4.5 V, ID =
- 7.8 A
- Max RDS(on) = 37 mW at VGS =
- 2.5 V, ID =
- 6.6 A
- Max RDS(on) = 50 mW at VGS =
- 1.8 V, ID =
- 5.5 A
- Max RDS(on) = 90 mW at VGS =
- 1.5 V, ID =
- 2.0 A
- Low Profile
- 0.8 mm Maximum in the New...
