Datasheet Summary
MOSFET
- Power, Single P-Channel, POWERTRENCH)
-30 V, -6.8 A, 35 mW
General Description This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications . It Features a MOSFET with low on- state resistance.
The WDFN6 (MicroFETt 2 × 2) package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Features
- Max rDS(on) = 35 mW at VGS =
- 10 V, ID =
- 6.8 A
- Max rDS(on) = 65 mW at VGS =
- 4.5 V, ID =
- 5.0 A
- Low Profile
- 0.8 mm Maximum
- in the New Package WDFN6
(MicroFET 2 × 2 mm)
- HBM ESD Protection Level > 3k V Typical (Note 3)
- Free from...
