FDMA8051L datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* Max rDS(on) = 14 mW at VGS = 10 V, ID = 10 A
* Max rDS(on) = 18 mW at VGS = 4.5 V, ID = 8.5 A
* Low Profile − 0.8 mm maximum in the new package MicroFET 2 x.

Description

This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low rDS(on) and gate charge provide excellent switching performance. Features
* Max rDS(on) = 14 mW at VGS = 10 V, ID = 10 A .

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