Datasheet Summary
MOSFET
- Single, P-Channel, POWERTRENCH)
-12 V, -12 A, 12.5 mW
General Description This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It Features a MOSFET with low on- state resistance and zener diode protection against ESD. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Features
- Max RDS(on) = 12.5 mW at VGS =
- 4.5 V, ID =
- 12 A
- Max RDS(on) = 18 mW at VGS =
- 2.5 V, ID =
- 10 A
- Max RDS(on) = 28 mW at VGS =
- 1.8 V, ID =
- 8 A
- Low Profile
- 0.8 mm Maximum in the New Package MicroFET
2x2 mm
- HBM ESD Protection...
