Datasheet Summary
MOSFET
- N-Channel, POWERTRENCH)
150 V, 25 A, 34 mW
General Description This N- Channel MOSFET is produced using onsemi‘s advanced
POWERTRENCH process that has been especially tailored to minimize the on- state resistance and yet maintain superior switching performance.
Features
- Extended TJ Rating to 175°C
- Max RDS(on) = 34 mW at VGS = 10 V, ID = 5.4 A
- Max RDS(on) = 44 mW at VGS = 6 V, ID = 4.8 A
- High Performance Technology for Extremely Low RDS(on)
- 100% UIL Tested
- Pb- Free, Halide Free and RoHS pliant
Applications
- DC- DC Conversion
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value Unit
Drain to Source Voltage
Gate to...
