Datasheet Summary
MOSFET
- P-Channel, POWERTRENCH)
-150 V, -2.6 A, 1.2 W
General Description This P- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been optimized for the on- state resistance and yet maintain superior switching performance.
Features
- Max rDS(on) = 1.2 W at VGS =
- 10 V, ID =
- 1 A
- Max rDS(on) = 1.4 W at VGS =
- 6 V, ID =
- 0.9 A
- Very Low RDS- On Mid Voltage P- Channel Silicon Technology
Optimized for Low Qg
- This Product is Optimized for Fast Switching Applications as well as
Load Switch Applications
- 100% UIL Tested
- These Devices are Pb- Free, Halide Free and are RoHS pliant
Applications
- Active Clamp Switch
- Load Switch
DATA SHEET...
