FDMC8878 Description
FDMC8878 N-Channel POWERTRENCH) MOSFET 30 V, 16.5 A, 14 mW This N−Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications.
FDMC8878 Key Features
- RDS(on) = 14 mW (Max.) @ VGS = 10 V, ID = 9.6 A
- RDS(on) = 17 mW (Max.) @ VGS = 4.5 V, ID = 8.7 A
- Low Profile
- 0.8 mm Max in MLP 3.3 x 3.3
- These Devices are Pb-Free and are RoHS pliant
- DC Conversion
- 55 to °C +150
- Rev. 5
- VDS = 24 V, VGS = 0 V, TJ = 125°C
- VGS = ±20 V, VDS = 0 V