Datasheet Summary
MOSFET
- Dual N-Channel, POWERTRENCH)
60 V, 8.2 A, 17 mW
General Description This device includes two 60 V N- Channel MOSFETs in a dual
Power 33 (3 mm x 3 mm MLP) package. The package is enhanced for exceptional thermal performance.
Features
- Max rDS(on) = 17 mW at VGS = 10 V, ID = 8.2 A
- Max rDS(on) = 27 mW at VGS = 4.5 V, ID = 6.7 A
- Termination is Lead- free
- These Devices are RoHS pliant
Applications
- Battery Protection
- Load Switching
- Bridge Topologies
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Units
VDS Drain to Source Voltage
VGS Gate to Source Voltage
±20
ID Drain Current
- Continuous
TA =...
