FDMS0312S mosfet equivalent, n-channel mosfet.
* Max rDS(on) = 4.9 mW at VGS = 10 V, ID = 18 A
* Max rDS(on) = 5.8 mW at VGS = 4.5 V, ID = 14 A
* Advanced Package and Silicon Combination for Low rDS(on) an.
* Synchronous Rectifier for DC/DC Converters
* Notebook Vcore/GPU Low Side Switch
* Networking Point of Load.
The FDMS0312S has been designed to minimize losses in power
conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device ha.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 438.37KB)