FDMS0312S Datasheet - ON Semiconductor

N-Channel MOSFET

FDMS0312S Features

* Max rDS(on) = 4.9 mW at VGS = 10 V, ID = 18 A

* Max rDS(on) = 5.8 mW at VGS = 4.5 V, ID = 14 A

* Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency

* SyncFET Schottky Body Diode

* MSL1 Robust Package Design

* 100% UIL Tested

FDMS0312S General Description

The FDMS0312S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Sch.

FDMS0312S Datasheet (438.37 KB)