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FDMS3602S - 25V Asymmetric Dual N-Channel MOSFET

Features

  • Q1: N-Channel.
  • Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A.
  • Max rDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel.
  • Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 26 A.
  • Max rDS(on) = 3.4 mΩ at VGS = 4.5 V, ID = 22 A.
  • Low inductance packaging shortens rise/fall times, resulting in lower switching losses.
  • MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing.
  • RoHS Compliant This devic.

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Datasheet Details

Part number FDMS3602S
Manufacturer onsemi
File Size 1.96 MB
Description 25V Asymmetric Dual N-Channel MOSFET
Datasheet download datasheet FDMS3602S Datasheet

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FDMS3602S PowerTrench® Power Stage FDMS3602S PowerTrench® Power Stage 25 V Asymmetric Dual N-Channel MOSFET General Description Features Q1: N-Channel „ Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A „ Max rDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel „ Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 26 A „ Max rDS(on) = 3.4 mΩ at VGS = 4.5 V, ID = 22 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.
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