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FDN335N - N-Channel MOSFET

Datasheet Summary

Description

This N Channel 2.5 V specified MOSFET is produced using onsemi advanced POWERTRENCH® process that has been especially tailored to minimize the on

state resistance and yet maintain low gate charge for superior switching performance.

Features

  • 1.7 A, 20 V.
  • RDS(ON) = 0.07 W @ VGS = 4.5 V.
  • RDS(ON) = 0.1 W @ VGS = 2.5 V.
  • Low Gate Charge (3.5 nC typical).
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • High Power and Current Handling Capability.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Datasheet preview – FDN335N

Datasheet Details

Part number FDN335N
Manufacturer ON Semiconductor
File Size 288.03 KB
Description N-Channel MOSFET
Datasheet download datasheet FDN335N Datasheet
Additional preview pages of the FDN335N datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, 2.5 V Specified, POWERTRENCH) 20 V, 1.7 A, 100 mW FDN335N General Description This N−Channel 2.5 V specified MOSFET is produced using onsemi advanced POWERTRENCH® process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. Features • 1.7 A, 20 V ♦ RDS(ON) = 0.07 W @ VGS = 4.5 V ♦ RDS(ON) = 0.1 W @ VGS = 2.5 V • Low Gate Charge (3.
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