FDN335N
FDN335N is N-Channel MOSFET manufactured by onsemi.
Description
This N- Channel 2.5 V specified MOSFET is produced using onsemi advanced POWERTRENCH® process that has been especially tailored to minimize the on- state resistance and yet maintain low gate charge for superior switching performance.
Features
- 1.7 A, 20 V
- RDS(ON) = 0.07 W @ VGS = 4.5 V
- RDS(ON) = 0.1 W @ VGS = 2.5 V
- Low Gate Charge (3.5 n C typical)
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
- This Device is Pb- Free and is Ro HS pliant
Applications
- DC- DC Converter
- Load Switch
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)
Symbol
Parameter
Value Unit
VDSS Drain- Source Voltage
VGSS Gate- Source Voltage
±8
Drain Current
Continuous (Note 1a)
Pulsed
PD Power Dissipation (Note 1a) for Single Operation (Note 1b)
TJ, TSTG Operating and Storage Junction Temperature Range
- 55 to 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Symbol
Parameter
Max
Unit
Rq JA Thermal Resistance, Junction- to- Ambient (Note...
