Datasheet Summary
MOSFET
- N-Channel, POWERTRENCH)
100 V, 164 A, 4.5 mW
FDP045N10A / FDI045N10A
Description This N- Channel MOSFET is produced using onsemi’s advance
POWERTRENCH process that has been tailored to minimize the on- state resistance while maintaining superior switching performance.
Features
- RDS(on) = 3.8 mW ( Typ.) @ VGS = 10 V, ID = 100 A
- Fast Switching Speed
- Low Gate Charge, QG = 54 nC (Typ.)
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
- This Device is Pb- Free and is RoHS pliant
Applications
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection Circuit
- Motor Drives and Uninterruptible Power...
