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FDPF4D5N10C, FDP4D5N10C Datasheet - ON Semiconductor

FDPF4D5N10C N-Channel MOSFET

This N *Channel MV MOSFET is produced using onsemi’s advanced PowerTrench process that incorporates Shielded Gate technology. This Process has been Optimized to minimize on *state resistance and yet maintain superior switching performance with best in class soft body diode. TO .

FDPF4D5N10C Features

* Max RDS(on) = 4.5 mW at VGS = 10 V, ID = 100 A

* Extremely Low Reverse Recovery Charge, Qrr

* 100% UIL Tested

* This Device is Pb

* Free Halide, Free and RoHS Compliant. Applications

* Synchronous Rectification for ATX / Server / Telecom PSU

FDP4D5N10C-ONSemiconductor.pdf

This datasheet PDF includes multiple part numbers: FDPF4D5N10C, FDP4D5N10C. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

FDPF4D5N10C, FDP4D5N10C

Manufacturer:

ON Semiconductor ↗

File Size:

429.70 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: FDPF4D5N10C, FDP4D5N10C.
Please refer to the document for exact specifications by model.

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FDPF4D5N10C FDP4D5N10C N-Channel MOSFET ON Semiconductor

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