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FDU8896 - N-Channel Power MOSFET

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

DC/DC converters Fea

Features

  • rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A.
  • rDS(ON) = 6.8mΩ, VGS = 4.5V, ID = 35A.
  • High performance trench technology for extremely low rDS(ON).
  • Low gate charge.
  • High power and current handling capability D G S DTO-P-2A5K2 (TO-252) GDS I-PAK (TO-251AA) MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) (Note 1) Conti.

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Datasheet Details

Part number FDU8896
Manufacturer ON Semiconductor
File Size 292.21 KB
Description N-Channel Power MOSFET
Datasheet download datasheet FDU8896 Datasheet
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Full PDF Text Transcription

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FDD8896 / FDU8896 FDD8896 / FDU8896 N-Channel PowerTrench® MOSFET 30V, 94A, 5.7mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications • DC/DC converters Features • rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A • rDS(ON) = 6.8mΩ, VGS = 4.
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