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FDV301N-F169 - N-Channel Digital FET

Download the FDV301N-F169 datasheet PDF. This datasheet also covers the FDV301N variant, as both devices belong to the same n-channel digital fet family and are provided as variant models within a single manufacturer datasheet.

General Description

This N

transistor is produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance.

Key Features

  • 25 V, 0.22 A Continuous, 0.5 A Peak.
  • RDS(on) = 5 W @ VGS = 2.7 V.
  • RDS(on) = 4 W @ VGS = 4.5 V.
  • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.06 V.
  • Replace Multiple NPN Digital Transistors with One DMOS FET.
  • This Device is Pb.
  • Free and Halide Free Vcc D OUT IN G S GND Figure 1. Inverter.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDV301N-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
FDV301N N-Channel Digital FET Fairchild Semiconductor
FDV301N N-Channel MOSFET Kexin
FDV302P Digital FET/ P-Channel Fairchild Semiconductor
FDV303N N-Channel Digital FET Fairchild Semiconductor
FDV303N N-Channel MOSFET Kexin

Other Datasheets by onsemi

Part Number Description
FDV301N N-Channel Digital FET
FDV302P P-Channel Digital FET
FDV303N N-Channel Digital FET
FDV304P P-Channel Digital FET
FDV304P-F169 P-Channel Digital FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Digital FET, N-Channel FDV301N, FDV301N-F169 General Description This N−Channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N−channel FET can replace several different digital transistors, with different bias resistor values. Features • 25 V, 0.22 A Continuous, 0.5 A Peak ♦ RDS(on) = 5 W @ VGS = 2.7 V ♦ RDS(on) = 4 W @ VGS = 4.5 V • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.