FDV301N-F169 Datasheet, ON Semiconductor

* 25 V, 0.22 A Continuous, 0.5 A Peak
* RDS(on) = 5 W @ VGS = 2.7 V
* RDS(on) = 4 W @ VGS = 4.5 V
* Very Low Level Gate Drive Requirements Allowing Direct.

as a replacement for digital transistors. Since bias resistors are not required, this one N−channel FET can replace seve.