FDV301N-F169 Datasheet | onsemi

Digital FET, N-Channel FDV301N, FDV301N-F169 General Description This N- Channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on- state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N- channel FET can replace several different digital transistors, with different bias resistor values. Features - 25 V, 0.22 A Continuous, 0.5 A Peak - RDS(on) = 5 W @ VGS = 2.7 V - RDS(on) = 4 W @ VGS = 4.5 V - Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.06 V - Replace Multiple NPN Digital Transistors with One DMOS FET - This Device is Pb- Free and Halide Free Vcc Figure 1. Inverter Application DATA SHEET .onsemi. SOT- 23 CASE 318- 08 MARKING DIAGRAM &E&Y 301&E&G &E = Designates Space &Y = Binary Calendar Year Coding Scheme = Specific Device Code &G = Date Code ORDERING INFORMATION Device Package Shipping† FDV301N, FDV301N-...