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FDV304P-F169 - P-Channel Digital FET

Download the FDV304P-F169 datasheet PDF. This datasheet also covers the FDV304P variant, as both devices belong to the same p-channel digital fet family and are provided as variant models within a single manufacturer datasheet.

General Description

This P

produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance at low gate drive conditions.

Key Features

  • 25 V,.
  • 0.46 A Continuous,.
  • 1.5 A Peak.
  • RDS(on) = 1.1 W @ VGS =.
  • 4.5 V.
  • RDS(on) = 1.5 W @ VGS =.
  • 2.7 V.
  • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V.
  • Gate.
  • Source Zener for ESD Ruggedness. > 6 kV Human Body Model.
  • Compact Industry Standard SOT.
  • 23 Surface Mount Package.
  • This Device is Pb.
  • Free and Halide Free.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDV304P-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
FDV304P Digital FET/ P-Channel Fairchild Semiconductor
FDV301N N-Channel Digital FET Fairchild Semiconductor
FDV301N N-Channel MOSFET Kexin
FDV302P Digital FET/ P-Channel Fairchild Semiconductor
FDV303N N-Channel Digital FET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FDV304P P-Channel Digital FET
FDV301N N-Channel Digital FET
FDV301N-F169 N-Channel Digital FET
FDV302P P-Channel Digital FET
FDV303N N-Channel Digital FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Digital FET, P-Channel FDV304P, FDV304P-F169 General Description This P−Channel enhancement mode field effect transistors is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on−state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on−state resistance even at gate drive voltages as low as 2.5 V. Features • −25 V, −0.46 A Continuous, −1.5 A Peak ♦ RDS(on) = 1.1 W @ VGS = −4.5 V ♦ RDS(on) = 1.5 W @ VGS = −2.7 V • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V • Gate−Source Zener for ESD Ruggedness.