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FDV304P-F169 - P-Channel Digital FET

Download the FDV304P-F169 datasheet PDF. This datasheet also covers the FDV304P variant, as both devices belong to the same p-channel digital fet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (FDV304P-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

This P−Channel enhancement mode field effect transistors is produced using onsemi’s proprietary, high cell density, DMOS technology.

This very high density process is tailored to minimize on−state resistance at low gate drive conditions.

This device is designed especially for application in battery power applications such as notebook computers and cellular phones.

Overview

Digital FET, P-Channel FDV304P, FDV304P-F169 General.

Key Features

  • 25 V,.
  • 0.46 A Continuous,.
  • 1.5 A Peak.
  • RDS(on) = 1.1 W @ VGS =.
  • 4.5 V.
  • RDS(on) = 1.5 W @ VGS =.
  • 2.7 V.
  • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V.
  • Gate.
  • Source Zener for ESD Ruggedness. > 6 kV Human Body Model.
  • Compact Industry Standard SOT.
  • 23 Surface Mount Package.
  • This Device is Pb.
  • Free and Halide Free.

More Datasheets from onsemi

Part Number Description
FDV304P P-Channel Digital FET
FDV301N N-Channel Digital FET
FDV301N-F169 N-Channel Digital FET
FDV302P P-Channel Digital FET
FDV303N N-Channel Digital FET