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DATA SHEET www.onsemi.com
MOSFET – Power, Single P-Chanel
-40 V, -30 A, 20.5 mW
FDWS9511L-F085
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
−40
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 3)
Steady TC = 25°C
ID
State
TC = 100°C
−30
A
−30
Power Dissipation RqJC (Note 1)
TC = 25°C
PD
TC = 100°C
68.2 W 34.
FDWS9511L-F085 Datasheet
