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FFH50US60S-F085 Datasheet

Diode

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STEALTHt Diode
50 A, 600 V
FFH50US60S-F085
Description
The FFH50US60SF085 is a STEALTHt diode optimized for low
loss performance in output rectification. The STEALTH family
exhibits low reverse recovery current(IRR),low VF and soft recovery
under typical operating conditions. It has a low forwardvoltage drop
and is of silicon nitride passivated.
This device is intended for use as a freewheel/clamping diode
in various automotive switching power supplies and other power
switching applications. Its low stored charge as well as Stealth and soft
recovery characteristics minimize ringing and electrical noise while
reduce the overall power loss.
Features
Stealth Recovery, trr = 163 ns ( Typ.) @ IF = 50 A)
Low Forward Voltage( VF = 1.69 V (Max.) @ IF = 50 A )
Avalanche Energy Rated
AECQ101 Qualified
This Device is PbFree
Applications
Automotive DCDC Converter
Automotive On Board Charger
Switching Power Supply
Power Switching Circuits
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TC = 25 °C)
Nonrepetitive Peak Surge Current
(Halfwave 1 Phase 50 Hz)
VRRM
VRWM
VR
IF(AV)
IFSM
600
600
600
50
150
V
V
V
A
A
Avalanche Energy
(1 A, 40 mH)
EAVL
20 mJ
Operating Junction and Storage
Temperature
TJ, TSTG
55 to
+175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
ANODE
CATHODE
TO2472L
MARKING DIAGRAM
$Y&Z&3&K
50US60S
$Y
&Z
&3
&K
50US60S
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
1. Cathode
2. Anode
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
March, 2020 Rev. 4
1
Publication Order Number:
FFH50US60SF085/D


  ON Semiconductor Electronic Components Datasheet  

FFH50US60S-F085 Datasheet

Diode

No Preview Available !

FFH50US60SF085
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
FFH50US60S
FFH50US60SF085
TO2472L
Tube
Quantity
30
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
IR Instantaneous Reverse Current
VFM
(Note 1)
Instantaneous Forward Voltage
VR = 600 V
IF = 50 A
TC = 25°C
TC = 175°C
TC = 25°C
TC = 175°C
− − 100 mA
1000
mA
1.27 1.69 V
1.19 1.57 V
trr
(Note 2)
Reverse Recovery Time
IF = 1 A,
di/dt = 200 A/ms,
VR = 390 V
IF = 50 A,
di/dt = 200 A/ms,
VR = 390 V
TC = 25°C
TC = 25°C
TC = 175°C
41 82 ns
163
364
ns
ns
ta Reverse Recovery Time
tb
Qrr Reverse Recovery Charge
IF = 50 A,
di/dt = 200 A/ms,
VR = 390 V
TC = 25°C
65 ns
98 ns
886 nC
1. Pulse : Test Pulse width = 300 ms, Duty Cycle = 2%
2. Guaranteed by design
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TEST CIRCUITS AND WAVEFORMS
VGE AMPLITUDE AND
RG CONTROL dlF/dt
t1 AND t2 CONTROL IF
VGE
t1
t2
RG
L
DUT
IGBT
CURRENT
SENSE
+
VDD
Figure 1. Trr Test Circuit
IF
0
dIF
dt
Trr
ta tb
0.25I RM
IRM
Figure 2. Trr Waveforms and Definitions
I=1A
L = 40 mH
R < 0.1 W
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL)VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
L
R
CURRENT
SENSE
Q1
DUT
+
VDD
VDD
Figure 3. Avalanche Energy Test Circuit
VAVL
IL
IV
IL
t0
t1 t2
t
Figure 4. Avalanche Current and Voltage Waveforms
www.onsemi.com
2


Part Number FFH50US60S-F085
Description Diode
Maker ON Semiconductor
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