900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




  ON Semiconductor Electronic Components Datasheet  

FFPF30UA60S Datasheet

UItrafast Diode

No Preview Available !

FFPF30UA60S
UItrafast II Diode
30 A, 600 V
Description
The FFPF30UA60S is a ultrafast II diode with low forward voltage
drop. This device is intended for use as freewheeling and clamping
diodes in a variety of switching power supplies and other power
switching applications. It is specially suited for use in switching power
supplies and industrial application.
Features
Ultrafast Recovery, tRR = 90 ns (@ IF = 30 A)
Max Forward Voltage, VF = 2.2 V (@ TC = 25°C)
600 V Reverse Voltage and High Reliability
Avalanche Energy Rated
This Device is PbFree and is RoHS Compliant
Applications
Boost Diode in PFC and SMPS
Welder, UPS and Motor Control Application
ABSOLUTE MAXIMUM RATINGS
TC = 25°C unless otherwise noted
Symbol
Parameter
VRRM
Peak Repetitive Reverse Voltage
Rating Unit
600
V
VRWM
Working Peak Reverse Voltage
600
V
IF(AV)
Average Rectified Forward Current
30
A
@ TC = 43°C
IFSM
Nonrepetitive Peak Surge Current
180
A
60Hz Single HalfSine Wave
TJ, TSTG
Operating Junction and Storage
Temperature
65 to
°C
+175
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
1
1. Cathode
2
2. Anode
12
TO220, 2Lead
CASE 221AS
MARKING DIAGRAM
$Y&Z&3&K
F30UA60S
© Semiconductor Components Industries, LLC, 2009
May, 2019 Rev. 3
$Y
&Z&3
&K
F30UA60S
= ON Semiconductor Logo
= Data Code (Year & Week)
= Lot
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1
Publication Order Number:
FFPF30UA60S/D


  ON Semiconductor Electronic Components Datasheet  

FFPF30UA60S Datasheet

UItrafast Diode

No Preview Available !

FFPF30UA60S
THERMAL CHARACTERISTICS TC = 25°C unless otherwise noted
Symbol
Parameter
RθJC
Maximum Thermal Resistance, Junction to Case
Max.
2.5
Unit
°C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
FFPF30UA60S
F30UA60S
TO220F2L
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50
ELECTRICAL CHARACTERISTICS TC = 25°C unless otherwise noted
Parameter
Conditions
Min. Typ. Max. Unit
VF
(Note 1)
IF = 30 A
IF = 30 A
TC = 25°C
TC = 125°C
2.2
V
2.0
IR
(Note 1)
VR = 600 V
VR = 600 V
TC = 25°C
TC = 125°C
100
mA
150
tRR
IRR
QRR
IF = 30 A, diF/dt = 200 A/μs
TC = 25°C
90
ns
8
A
360
nC
WAVL
Avalanche Energy ( L = 40 mH)
20
mJ
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse: Test Pulse Width = 300 ms, Duty Cycle = 2%
Test Circuit and Waveforms
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
www.onsemi.com
2



Part Number FFPF30UA60S
Description UItrafast Diode
Maker ON Semiconductor
Total Page 3 Pages
PDF Download

FFPF30UA60S Datasheet PDF





Similar Datasheet

1 FFPF30UA60S UItrafast Diode
Fairchild Semiconductor
2 FFPF30UA60S fast Recovery Rectifier
INCHANGE
3 FFPF30UA60S UItrafast Diode
ON Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy