* Max Junction Temperature 175°C
* Avalanche Rated 33 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery / No Forward Recovery
* AEC
* Q101 Qualified and PPAP Capable
FFSB0865B-F085 Datasheet (376.83 KB)
FFSB0865B-F085
376.83 KB
Silicon carbide schottky diode.
Silicon Carbide Schottky Diode 650 V, 8 A FFSB0865B-F085 Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superio.
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