Datasheet4U Logo Datasheet4U.com

FFSD10120A - Silicon Carbide Schottky Diode

General Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.

Key Features

  • Max Junction Temperature 175 °C.
  • Avalanche Rated 100 mJ.
  • High Surge Current Capacity.
  • Positive Temperature Coefficient.
  • Ease of Paralleling.
  • No Reverse Recovery / No Forward Recovery.

📥 Download Datasheet

Datasheet Details

Part number FFSD10120A
Manufacturer onsemi
File Size 845.18 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet FFSD10120A Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FFSM0465A SiC Schottky Diode onsemi
FFSP3065A Silicon Carbide Schottky Diode Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FFSD1065A Silicon Carbide Schottky Diode
FFSD1065B SiC Schottky Diode
FFSD1065B-F085 Silicon Carbide Schottky Diode
FFSD0465A Silicon Carbide Schottky Diode
FFSD0665A Silicon Carbide Schottky Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FFSD10120A — Silicon Carbide Schottky Diode www.onsemi.com FFSD10120A Silicon Carbide Schottky Diode 1200 V, 10 A Features • Max Junction Temperature 175 °C • Avalanche Rated 100 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery / No Forward Recovery Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.