FFSH15120A - Silicon Carbide Schottky Diode

onsemi

General Description

technology that provides superior switching performance and higher reliability compared to Silicon.

Key Features

Max Junction Temperature 175°C.
Avalanche Rated 145 mJ.
High Surge Current Capacity.
Positive Temperature Coefficient.
Ease of Paralleling.
No Reverse Recovery/No Forward Recovery.
This Device is Pb.
Free, Halogen Free/BFR Free and RoHS Compliant.

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FFSH15120A silicon carbide schottky diode by onsemi - Datasheet Preview

Datasheet Details

Part number	FFSH15120A
Manufacturer	onsemi
File Size	399.74 KB
Description	Silicon Carbide Schottky Diode
Datasheet	FFSH15120A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 15 A, 1200 V, D1, TO-247-2L FFSH15120A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.