FGA15N120ANTDTU
Description
Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
Key Features
- NPT Trench Technology, Positive temperature coefficient
- Low Saturation Voltage: VCE(sat), typ = 1.9 V @ IC = 15 A and TC = 25C
- Low Switching Loss: Eoff, typ = 0.6 mJ @ IC = 15 A and TC = 25C
- Extremely Enhanced Avalanche Capability
