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FGB20N60SFD-F085 - IGBT

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General Description

Using novel field-stop IGBT technology, ON Semiconductor’s new series of field-stop IGBTs offers the optimum performance for automotive chargers, inverters, and other applications where low conduction and switching losses are essential.

C D2-PAK GE Absolute Maximum Ratings Symbol Description VCES VGES IC ICM (1) IF IFM(1) PD TJ Tstg TL Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current @ TC = 25oC @ TC = 100oC Pulsed Collector Current Diode Forward Current Diode Forward Current @ TC = 25oC @ TC = 25oC @ TC = 100oC Pulsed Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation @ TC = 25oC @ TC = 100oC Operating Junction Temperature Storage Temperature Range Maximum Lead Temp.

for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter RθJC(IGBT) ( 2) Thermal Resistance, Junction to Case RθJC(Diode) Thermal Resistance, Junction to Case Symbol Parameter RθJA Thermal Resistance, Junction to Ambient (PCB Mount)(2) ©2013 Semiconductor Components Industries, LLC.

Overview

FGB20N60SFD-F085 600V, 20A Field Stop IGBT FGB20N60SFD-F085 600V, 20A Field Stop.

Key Features

  • High current capability.
  • Low saturation voltage: VCE(sat) = 2.2V @ IC = 20A.
  • High input impedance.
  • Fast switching.
  • Qualified to Automotive Requirements of AEC-Q101.
  • RoHS complaint.

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