FGB3040CS
FGB3040CS is N-Channel IGBT manufactured by onsemi.
Description
The FGB3040CS is an lgnition IGBT that offers outstanding SCIS capability along with a ratiometric emitter current sensing capability. This sensing is based on a emitter active area ratio of 200:1. The output is provided through a fourth (sense) lead. This signal provides a current level that is proportional to the main collector to emitter current. The effective ratio as measured on the sense lead is a function of the sense output, the collector current and the gate to emitter drive voltage.
Applications
- Smart Automotive lgnition Coil Driver Circuits
- ECU Based Systems
- Distributorless Based Systems
- Coil on Plug Based Systems
Features
- SCIS Energy = 300m J at TJ = 25o C
- Logic Level Gate Drive
- Qualified to AEC Q101
- Ro HS pliant
Package
Symbol
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
BVCER Collector to Emitter Breakdown Voltage (IC = 2m A)
BVECS Emitter to Collector Breakdown Voltage (IC = 1m A) (Reverse Battery Condition)
ESCIS25 Self Clamping Inductive Switching Energy (at starting TJ = 25°C)
ESCIS150 Self Clamping Inductive Switching Energy (at starting TJ = 150°C)
IC25 Continuous Collector Current, at VGE = 4.0V, TC = 25°C
IC110
Continuous Collector Current, at VGE = 4.0V, TC = 110°C
VGEM Maximum Continuous Gate to Emitter Voltage
Power Dissipation, at TC = 25°C Power Dissipation Derating, for TC > 25o C
TJ Operating Junction Temperature Range
TSTG Storage Junction Temperature Range
TL Max. Lead Temp. for Soldering (at 1.6mm from case for 10sec)
TPKG Max. Package Temp. for Soldering (Package Body for 10 sec)
ESD Electrostatic Discharge Voltage, HBM model (100pfd, 1500 ohms)
@2012 Semiconductor ponents Industries, LLC. October-2017,Rev.3
Ratings 430 24 300 170 21 19 ±10 150 1
-40 to 175 -40 to 175
300 260
Units V
V m J m...
