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FGB3040CS - N-Channel IGBT

General Description

The FGB3040CS is an lgnition IGBT that offers outstanding SCIS capability along with a ratiometric emitter current sensing capability.

This sensing is based on a emitter active area ratio of 200:1.

The output is provided through a fourth (sense) lead.

Key Features

  • SCIS Energy = 300mJ at TJ = 25oC.
  • Logic Level Gate Drive.
  • Qualified to AEC Q101.
  • RoHS Compliant Package Symbol Device Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter BVCER Collector to Emitter Breakdown Voltage (IC = 2mA) BVECS Emitter to Collector Breakdown Voltage (IC = 1mA) (Reverse Battery Condition) ESCIS25 Self Clamping Inductive Switching Energy (at starting TJ = 25°C) ESCIS150 Self Clamping Inductive Switching Energy (at sta.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FGB3040CS 300mJ, 400V, N-Channel Current Sensing Ignition IGBT FGB3040CS EcoSPARKŠ 300mJ, 400V, N-Channel Current Sensing Ignition IGBT General Description The FGB3040CS is an lgnition IGBT that offers outstanding SCIS capability along with a ratiometric emitter current sensing capability. This sensing is based on a emitter active area ratio of 200:1. The output is provided through a fourth (sense) lead. This signal provides a current level that is proportional to the main collector to emitter current. The effective ratio as measured on the sense lead is a function of the sense output, the collector current and the gate to emitter drive voltage.