FGB3040CS Datasheet - ON Semiconductor

N-Channel IGBT

FGB3040CS Features

* SCIS Energy = 300mJ at TJ = 25oC

* Logic Level Gate Drive

* Qualified to AEC Q101

* RoHS Compliant Package Symbol Device Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter BVCER Collector to Emitter Breakdown Voltage (IC = 2mA) BVECS Emitter to

FGB3040CS General Description

The FGB3040CS is an lgnition IGBT that offers outstanding SCIS capability along with a ratiometric emitter current sensing capability. This sensing is based on a emitter active area ratio of 200:1. The output is provided through a fourth (sense) lead. This signal provides a current level that is pro.

FGB3040CS Datasheet (827.48 KB)

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FGB3040CS

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ON Semiconductor ↗

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Description:

N-channel igbt.
FGB3040CS 300mJ, 400V, N-Channel Current Sensing Ignition IGBT FGB3040CS EcoSPARK 300mJ, 400V, N-Channel Current Sensing Ignition IGBT General .

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FGB3040CS N-Channel IGBT ON Semiconductor

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FGB3040CS Features

FGB3040CS General Description

Datasheet Details

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