
	ON Semiconductor Electronic Components Datasheet

FGD3040G2-F085V Datasheet

N-Channel IGBT

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FGD3040G2-F085V

EcoSPARK) 2 Ignition IGBT

300 mJ, 400 V, N−Channel Ignition IGBT

Features

• SCIS Energy = 300 mJ at TJ = 25°C

• Logic Level Gate Drive

• AEC−Q101 Qualified and PPAP Capable

• RoHS Compliant

Applications

• Automotive Ignition Coil Driver Circuits

• Coil on Plug Application

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Symbol

Parameter

Value

Units

BVCER

BVECS

ESCIS25

Collector to Emitter Breakdown

Voltage (IC = 1 mA)

Emitter to Collector Voltage − Reverse

Battery Condition (IC = 10 mA)

Self Clamping Inductive Switching Energy

(Note 1)

400

300

ESCIS150 Self Clamping Inductive Switching Energy

(Note 2)

170

IC25

IC110

VGEM

Collector Current Continuous

at VGE = 5.0 V, TC = 25°C

Collector Current Continuous

at VGE = 5.0 V, TC = 110°C

Gate to Emitter Voltage Continuous

41 A

25.6 A

±10 V

PD Power Dissipation Total, TC = 25°C

Power Dissipation Derating, TC > 25°C

TJ Operating Junction and Storage

Temperature

150

−55 to 175

W/°C

°C

TSTG

Storage Junction Temperature Range

Max. Lead Temperature for Soldering

(Package Body for 10 s)

−55 to 175

300

°C

TPKG Max. Lead Temperature for Soldering

(Package Body for 10 s)

260 °C

ESD

HBM − Electrostatic Discharge Voltage

at 100 pF, 1500 W

4 kV

CDM − Electrostatic Discharge Voltage

at 1 W

2 kV

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Self clamped inductive Switching Energy (ESCIS25) of 300 mJ is based on

the test conditions that is starting TJ = 25°C, L = 3 mHy, ISCIS = 14.2 A,

VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.

2. Self Clamped inductive Switching Energy (ESCIS150) of 170 mJ is based on

the test conditions that is starting TJ = 150°C, L = 3mHy, ISCIS = 10.8 A,

VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.

www.onsemi.com

COLLECTOR

GATE

EMITTER

DPAK (SINGLE GAUGE)

CASE 369C

MARKING DIAGRAM

AYWW

FGD

3040G2

A = Assembly Location

Y = Year

WW = Work Week

FGD3040G2= Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2

of this data sheet.

August, 2019 − Rev. 2

Publication Order Number:

FGD3040G2−F085V/D


	ON Semiconductor Electronic Components Datasheet

FGD3040G2-F085V Datasheet

N-Channel IGBT

No Preview Available !

FGD3040G2−F085V

THERMAL RESISTANCE RATINGS

Characteristic

Junction−to−Case – Steady State (Drain)

Symbol

RqJC

Max

Units

°C/W

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Symbol

Parameter

Test Conditions

Min Typ. Max. Units

OFF CHARACTERISTICS

BVCER

BVCES

BVECS

BVGES

ICER

Collector to Emitter Breakdown Voltage

Emitter to Collector Breakdown Voltage

Gate to Emitter Breakdown Voltage

Collector to Emitter Leakage Current

IECS

Emitter to Collector Leakage Current

R1 Series Gate Resistance

R2 Gate to Emitter Resistance

ON CHARACTERISTICS (Note 5)

ICE = 2 mA, VGE = 0 V,

RGE = 1 kW, TJ = −40 to 150°C

RICGEE==100,mTJA,=V−G4E0

0 V,

150°C

ICE = −20 mA, VGE = 0 V,

TJ = 25°C

IGES = ±2 mA

VCE = 250 V

RGE = 1 kW

TJ = 25°C

TJ = 150°C

VEC = 24 V

TJ = 25°C

TJ = 150°C

370 400 430 V

390 420 450 V

28 −

−V

±12 ±14 − V

− − 25 mA

− − 1 mA

− − 40

− 120 − W

10K − 30K W

VCE(SAT)

ESCIS

Collector to Emitter Saturation Voltage

Self Clamped Inductive Switching

ICE = 6 A, VGE = 4 V, TJ = 25°C

ICE = 10 A, VGE = 4.5 V, TJ = 150°C

ICE = 15 A, VGE = 4.5 V, TJ = 150°C

L = 3.0 mHy, RG = 1 KW, VGE = 5 V,

(Note 1)

−

1.15 1.25

1.35 1.50

1.68 1.85

− 300 mJ

DYNAMIC CHARACTERISTICS

QG(ON)

VGE(TH)

Gate Charge

Gate to Emitter Threshold Voltage

VGEP

Gate to Emitter Plateau Voltage

SWITCHING CHARACTERISTICS

ICE = 10 A, VCE = 12 V, VGE = 5 V

ICE = 1 mA

VCE = VGE

TJ = 25°C

TJ = 150°C

VCE = 12 V, ICE = 10 A

− 21

1.3 1.7

0.75 1.2

− 2.8

− nC

2.2 V

1.8

−V

td(ON)R

trR

Current Turn−On Delay Time−Resistive

Current Rise Time−Resistive

VCE = 14 V, RL = 1 W, VGE = 5 V,

RG = 1 KW, TJ = 25°C

− 0.9 4 ms

− 1.9 7

td(OFF)L

tfL

Current Turn−Off Delay Time−Inductive

Current Fall Time−Inductive

VCE = 300 V, L = 1 mH, VGE = 5 V,

RG = 1 KW, ICE = 6.5 A, TJ = 25°C

− 4.8 15

− 2.0 15

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

PACKAGE MARKING AND DEVICE ORDERING INFORMATION

Device Marking

Device

Package

Reel Diameter

Tape Width

Qty†

FGD3040G2

FGD3040G2−F085V

DPAK (Pb−Free)

330 mm

16 mm

2500

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

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