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  ON Semiconductor Electronic Components Datasheet  

FGD3040G2-F085V Datasheet

N-Channel IGBT

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FGD3040G2-F085V
EcoSPARK) 2 Ignition IGBT
300 mJ, 400 V, NChannel Ignition IGBT
Features
SCIS Energy = 300 mJ at TJ = 25°C
Logic Level Gate Drive
AECQ101 Qualified and PPAP Capable
RoHS Compliant
Applications
Automotive Ignition Coil Driver Circuits
Coil on Plug Application
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Symbol
Parameter
Value
Units
BVCER
BVECS
ESCIS25
Collector to Emitter Breakdown
Voltage (IC = 1 mA)
Emitter to Collector Voltage Reverse
Battery Condition (IC = 10 mA)
Self Clamping Inductive Switching Energy
(Note 1)
400
28
300
V
V
mJ
ESCIS150 Self Clamping Inductive Switching Energy
(Note 2)
170
mJ
IC25
IC110
VGEM
Collector Current Continuous
at VGE = 5.0 V, TC = 25°C
Collector Current Continuous
at VGE = 5.0 V, TC = 110°C
Gate to Emitter Voltage Continuous
41 A
25.6 A
±10 V
PD Power Dissipation Total, TC = 25°C
Power Dissipation Derating, TC > 25°C
TJ Operating Junction and Storage
Temperature
150
1
55 to 175
W
W/°C
°C
TSTG
TL
Storage Junction Temperature Range
Max. Lead Temperature for Soldering
(Package Body for 10 s)
55 to 175
300
°C
°C
TPKG Max. Lead Temperature for Soldering
(Package Body for 10 s)
260 °C
ESD
HBM Electrostatic Discharge Voltage
at 100 pF, 1500 W
4 kV
CDM Electrostatic Discharge Voltage
at 1 W
2 kV
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Self clamped inductive Switching Energy (ESCIS25) of 300 mJ is based on
the test conditions that is starting TJ = 25°C, L = 3 mHy, ISCIS = 14.2 A,
VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.
2. Self Clamped inductive Switching Energy (ESCIS150) of 170 mJ is based on
the test conditions that is starting TJ = 150°C, L = 3mHy, ISCIS = 10.8 A,
VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.
www.onsemi.com
COLLECTOR
GATE
R1
R2
EMITTER
4
12
3
DPAK (SINGLE GAUGE)
CASE 369C
MARKING DIAGRAM
AYWW
FGD
3040G2
A = Assembly Location
Y = Year
WW = Work Week
FGD3040G2= Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2
of this data sheet.
© Semiconductor Components Industries, LLC, 2019
August, 2019 Rev. 2
1
Publication Order Number:
FGD3040G2F085V/D


  ON Semiconductor Electronic Components Datasheet  

FGD3040G2-F085V Datasheet

N-Channel IGBT

No Preview Available !

FGD3040G2F085V
THERMAL RESISTANCE RATINGS
Characteristic
JunctiontoCase – Steady State (Drain)
Symbol
RqJC
Max
1
Units
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min Typ. Max. Units
OFF CHARACTERISTICS
BVCER
BVCES
BVECS
BVGES
ICER
Collector to Emitter Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
IECS
Emitter to Collector Leakage Current
R1 Series Gate Resistance
R2 Gate to Emitter Resistance
ON CHARACTERISTICS (Note 5)
ICE = 2 mA, VGE = 0 V,
RGE = 1 kW, TJ = 40 to 150°C
RICGEE==100,mTJA,=VG4E0
=
to
0 V,
150°C
ICE = 20 mA, VGE = 0 V,
TJ = 25°C
IGES = ±2 mA
VCE = 250 V
RGE = 1 kW
TJ = 25°C
TJ = 150°C
VEC = 24 V
TJ = 25°C
TJ = 150°C
370 400 430 V
390 420 450 V
28
V
±12 ±14 V
− − 25 mA
− − 1 mA
− − 1 mA
− − 40
120 W
10K 30K W
VCE(SAT)
VCE(SAT)
VCE(SAT)
ESCIS
Collector to Emitter Saturation Voltage
Collector to Emitter Saturation Voltage
Collector to Emitter Saturation Voltage
Self Clamped Inductive Switching
ICE = 6 A, VGE = 4 V, TJ = 25°C
ICE = 10 A, VGE = 4.5 V, TJ = 150°C
ICE = 15 A, VGE = 4.5 V, TJ = 150°C
L = 3.0 mHy, RG = 1 KW, VGE = 5 V,
(Note 1)
1.15 1.25
V
1.35 1.50
V
1.68 1.85
V
300 mJ
DYNAMIC CHARACTERISTICS
QG(ON)
VGE(TH)
Gate Charge
Gate to Emitter Threshold Voltage
VGEP
Gate to Emitter Plateau Voltage
SWITCHING CHARACTERISTICS
ICE = 10 A, VCE = 12 V, VGE = 5 V
ICE = 1 mA
VCE = VGE
TJ = 25°C
TJ = 150°C
VCE = 12 V, ICE = 10 A
21
1.3 1.7
0.75 1.2
2.8
nC
2.2 V
1.8
V
td(ON)R
trR
Current TurnOn Delay TimeResistive
Current Rise TimeResistive
VCE = 14 V, RL = 1 W, VGE = 5 V,
RG = 1 KW, TJ = 25°C
0.9 4 ms
1.9 7
td(OFF)L
tfL
Current TurnOff Delay TimeInductive
Current Fall TimeInductive
VCE = 300 V, L = 1 mH, VGE = 5 V,
RG = 1 KW, ICE = 6.5 A, TJ = 25°C
4.8 15
2.0 15
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND DEVICE ORDERING INFORMATION
Device Marking
Device
Package
Reel Diameter
Tape Width
Qty
FGD3040G2
FGD3040G2F085V
DPAK (PbFree)
330 mm
16 mm
2500
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2


Part Number FGD3040G2-F085V
Description N-Channel IGBT
Maker ON Semiconductor
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FGD3040G2-F085V Datasheet PDF






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