FGD3040G2-F085V - N-Channel IGBT

onsemi

Key Features

SCIS Energy = 300 mJ at TJ = 25°C.
Logic Level Gate Drive.
AEC.
Q101 Qualified and PPAP Capable.
RoHS Compliant.

FGD3040G2-F085V n-channel igbt by onsemi - Datasheet Preview

Datasheet Details

Part number	FGD3040G2-F085V
Manufacturer	onsemi
File Size	685.00 KB
Description	N-Channel IGBT
Datasheet	FGD3040G2-F085V Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
FGD3040G2_F085	N-Channel Ignition IGBT	Fairchild Semiconductor
FGD3245G2_F085	N-Channel Ignition IGBT	Fairchild Semiconductor
FGD3325G2_F085	N-Channel Ignition IGBT	Fairchild Semiconductor
FGD3440G2_F085	N-Channel Ignition IGBT	Fairchild Semiconductor
FGD3N60LSD	IGBT	Fairchild Semiconductor

Other Datasheets by onsemi

Part Number	Description
FGD3040G2-F085	N-Channel IGBT
FGD3040G2-F085C	N-Channel IGBT
FGD3050G2	N-Channel IGBT
FGD3050G2V	N-Channel IGBT
FGD3245G2-F085	N-Channel IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

FGD3040G2-F085V EcoSPARK) 2 Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • Coil on Plug Application MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Parameter Value Units BVCER BVECS ESCIS25 Collector to Emitter Breakdown Voltage (IC = 1 mA) Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA) Self Clamping Inductive Switching Energy (Note 1) 400 28 300 V V mJ ESCIS150 Self Clamping Inductive Switching Energy (Note 2) 170 mJ IC25 IC110 VGEM Collector Current Continuous at VGE = 5.0 V, TC = 25°C Collector Current Continuous at VGE = 5.